Product Summary
The FZ1600R12KE3 is an IGBT module.
Parametrics
FZ1600R12KE3 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200 V; (2)DC-collector current, TC = 80℃, IC,nom: 1600 A; TC = 25℃, IC: 2300 A; (3)Repetitive peak collector current, tP = 1 ms, TC = 80℃, ICRM: 3200 A; (4)Total power dissipation, TC=25℃, Transistor Ptot: 7.8 kW; (5)Gate-emitter peak voltage, VGES: +/- 20V; (6)DC forward current, IF: 1600 A; (7)Repetitive peak forw. current, tp = 1 ms IFRM: 3200 A; (8)I2t - value, Diode, VR = 0V, tp = 10ms, TVj = 125℃, I2t: 300 kA2s; (9)Insulation test voltage, RMS, f = 50 Hz, t = 1 min. VISOL: 2.5 kV.
Features
FZ1600R12KE3 features: (1)Collector-emitter saturation voltage, IC = 1600A, VGE = 15V, Tvj = 25℃, VCEsat: 1.7 to 2.15 V; IC = 1600A, VGE = 15V, Tvj = 125℃, VCEsat: 2 to t.b.d. V; (2)Gate threshold voltage, IC = 64mA, VCE = VGE, Tvj = 25℃, VGE(th): 5 to 6.5 V; (3)Gate charge, VGE = -15V to +15V, QG: 15,4μC; (4)Input capacitance, f = 1MHz, Tvj = 25℃, VCE = 25V, VGE = 0V, Cies: 115 nF; (5)Reverse transfer capacitance, f = 1MHz, Tvj = 25℃, VCE = 25V, VGE = 0V, Cres: 5.4 nF; (6)Collector-emitter cut-off current, VCE = 1700V, VGE = 0V, Tvj = 25℃, ICES: 5 mA (7)Gate-emitter leakage current, VCE = 0V, VGE = 20V, Tvj = 25℃, IGES: 400 nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FZ1600R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 1600A SINGLE |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FZ1600R12HP4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1600A |
Data Sheet |
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FZ1600R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 1600A SINGLE |
Data Sheet |
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FZ1600R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1600A SINGLE |
Data Sheet |
Negotiable |
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FZ1600R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1600A SINGLE |
Data Sheet |
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FZ1600R17HP4 |
Infineon Technologies |
IGBT Modules IGBT 1700V 1600A |
Data Sheet |
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FZ1600R17HP4_B2 |
Infineon Technologies |
IGBT Modules IGBT 1700V 1600A |
Data Sheet |
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